Micron is setting new records in memory technology, unveiling the world’s fastest HBM3 Gen2 memory with a blazing speed of 1.2 terabytes per second (TB/s). But that’s not all; the company is also gearing up to introduce 32GB DDR5 chips into the market.
Previously known for its 24GB DDR5 chips, Micron is now stepping up its game by preparing for mass production of the 32GB DDR5 chips and higher capacity modules in the first half of 2024. This remarkable announcement coincided with the introduction of Micron’s HBM3 Gen2 memory.
The 32GB DDR5 memory circuit, crafted using Micron’s cutting-edge 1β (1-beta) process that avoids extreme ultraviolet lithography, represents a monumental leap in memory technology. While the data rates of these new 32GB blocks remain undisclosed, their potential is striking. These chips could pave the way for 1TB DDR5 modules, marking an unprecedented advancement. However, Micron is adopting a measured approach by initially offering 128GB modules next year.
Dubbed HBM3 Gen2 memory, Micron’s innovation is characterized by a total bandwidth of 1.2TB/s across an 8-level stack, with a maximum capacity of 24GB (soon to be expanded to 36GB circuits). Notably, compared to its predecessor HBM2E, the new product boasts an impressive 2.5-fold increase in energy efficiency.
But Micron isn’t stopping there. The company’s roadmap promises even more groundbreaking advancements, including HBMNex memory, which could potentially be labeled as HBM4. Anticipated to debut in 2026, this next-generation memory is projected to deliver an astounding 2+ TB/s bandwidth and support capacities of up to 64GB.
Micron’s relentless pursuit of memory excellence is driving innovation and propelling the technology industry into uncharted territories. As the company continues to push the boundaries of what’s possible in memory technology, the future looks exceptionally bright for both Micron and the broader tech landscape.